Improvement of the Temperature Characteristic of 1.3.MU.m GaInAsP Laser Diodes with GaInAsP/InP Short-Period Superlattice Barriers

We report on the characteristics of tensile-strained 1.3.MU.m InGaAsP multi-quantum well lasers with InP/GaInAsP short-period superlattices (SPSLs) in barriers and waveguide. Growth was carried out by all solid source atomic layer molecular beam epitaxy (ALMBE) without growth interruptions. Infinite length threshold current densities are as low as 176A/cm2 per quantum well for as cleaved broad area lasers. The values for the characteristic temperature T0 are as high as 90K for cavity lengths of 1200.MU.m. The improvement in T0 is attributed to the increased effective barrier height by the short-period superlattices.